2sd1539a Panasonic Corporation of North America, 2sd1539a Datasheet
2sd1539a
Manufacturer Part Number
2sd1539a
Description
Silicon Npn Epitaxial Planar Type For Low-voltage Switching
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1539A.pdf
(4 pages)
Power Transistors
2SD1539A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1071A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• Low collector-emitter saturation voltage V
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
dissipation
2. * : Rank classification
Parameter
Rank
Parameter
h
FE2
T
60 to 120
a
= 25°C
R
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
h
C
stg
CE(sat)
BE(sat)
C
FE2
CBO
EBO
t
t
j
f
CEO
FE1
90 to 180
stg
t
on
= 25°C
T
f
*
CE(sat)
Q
−55 to +150
Rating
I
V
V
V
V
I
I
V
I
V
C
C
C
C
150
CE
2.0
CB
EB
CE
CE
CC
50
40
25
= 10 mA, I
= 2 A, I
= 2 A, I
= 2 A, I
5
4
8
SJD00205BED
= 5 V, I
= 5 V, I
= 2 V, I
= 2 V, I
= 50 V, I
= 20 V
130 to 260
B
B
B1
= 0.1 A
= 0.1 A
C
C
C
C
P
= 0.2 A, I
Conditions
Unit
B
E
= 0.5 A, f = 10 MHz
= 0
= 0.1 A
= 1 A
°C
°C
W
V
V
V
A
A
= 0
= 0
B2
= − 0.2 A
Min
40
45
60
1
10.0
5.5
2
±0.2
±0.2
3
5.08
2.54
Typ
120
0.2
0.5
0.1
1.4
0.8
φ 3.1
±0.5
±0.3
±0.1
±0.1
TO-220F-A1 Package
±0.1
Max
260
0.5
1.5
50
50
2.7
1.3
0.5
±0.2
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
±0.2
+0.2
–0.1
Unit: mm
4.2
MHz
±0.2
Unit
µA
µA
µs
µs
µs
V
V
V
1
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2sd1539a Summary of contents
Page 1
... Power Transistors 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071A ■ Features • Low collector-emitter saturation voltage V • High-speed switching • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... (1)T =Ta C (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink 30 (4)Without heat sink (P =2.0W) C (1) 20 (2) 10 (3) ( 100 125 150 Ambient temperature T (°C) a BE(sat) C 100 25˚ =–25˚C C 100˚ ...
Page 3
... (1)Without heat sink (2)With a 100×100×2mm Al heat sink 10 1 −1 10 −2 10 −4 −3 −2 − Time t (s) (1) ( SJD00205BED 2SD1539A 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...