2sd1511g Panasonic Corporation of North America, 2sd1511g Datasheet

2sd1511g

Manufacturer Part Number

2sd1511g

Description

Bipolar Power Transistors

Manufacturer

Panasonic Corporation of North America

Datasheet

1.2SD1511G.pdf (4 pages)

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Transistors

2SD1511G

Silicon NPN epitaxial planar type darlington

For low-frequency output amplification

■ Features

■ Absolute Maximum Ratings T

Note) * : Printed circuit board: Copper foil area of 1 cm

■ Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: September 2007

• Forward current transfer ratio h

• A shunt resistor is omitted from the driver.

• Mini power type package, allowing downsizing of the equipment

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

priate to the driver circuit of motors and printer hammer: h

to 20 000.

and automatic insertion through the tape packing and the maga-

zine packing.

2. * 1: Pulse measurement

board thickness of 1.7 mm for the collector portion

* 2: Rank classification

Parameter

Rank

This product complies with the RoHS Directive (EU 2002/95/EC).

4 000 to 10 000 8 000 to 20 000 16 000 to 40 000

* 1, 2

* 1

is designed high, which is appro-

Symbol

= 25°C ± 3°C

Symbol

CBO

CEO

EBO

stg

CE(sat)

BE(sat)

CBO

EBO

CBO

CEO

EBO

= 25°C

−55 to +150

Rating

100

150

1.5

= 100 µA, I

= 1 mA, I

= 100 µA, I

= 1 A, I

or more, and the

SJD00341AED

= 4 V, I

= 10 V, I

= 25 V, I

= 1 mA

= 4 000

Conditions

Unit

= 0

°C

= −50 mA, f = 200 MHz

= 1 A

= 0

■ Package

■ Marking Symbol: P

■ Internal Connection

• Code

• Pin Name

MiniP3-F2

1: Base

2: Collector

3: Emitter

4 000

Min

100

≈ 200 Ω

Typ

150

40 000

Max

100

1.8

2.2

MHz

Unit



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2sd1511g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification ■ Features • Forward current transfer ratio h FE priate to the driver circuit of motors and printer hammer 000. • A shunt resistor is omitted from the driver. ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1511G  1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 120 160 200 ( °C ) Ambient temperature T a  BE(sat) C 100 = 1 000 25°C = − ...

Page 3

... This product complies with the RoHS Directive (EU 2002/95/EC). MiniP3-F2 4.50 ±0.10 1.60 ±0. 0.40 ±0.08 1.50 ±0.10 (5°) 3.00 ±0.15 1.50 3 0.50 ±0.08 (45°) SJD00341AED 2SD1511G Unit: mm ±0.10 0.41 ±0.03 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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