2sd1500 Inchange Semiconductor Company, 2sd1500 Datasheet
2sd1500
Manufacturer Part Number
2sd1500
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1500.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·High DC Current Gain
·Low Saturation Voltage
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: V
: h
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
FE
J
(BR)CEO
B
Silicon NPN Darlington Power Transistor
= 1000(Min) @I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 100V(Min)
C
=25℃
PARAMETER
C
= 10A
a
=25
℃)
-55~150
VALUE
150
100
150
10
40
8
1
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SD1500
Related parts for 2sd1500
2sd1500 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn =25 ℃) a VALUE UNIT 150 V 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1500 ...
Page 2
... 8V 10A 10A 50V 1MHz E CB test 25mA 5Ω 50V 2SD1500 MIN TYP. MAX UNIT 100 V 1.5 V 2.0 V μ 1000 3 MHz μs 0.6 μs 3.0 μs 1.0 ...