Transistors
2SD1198, 2SD1198A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
Note) * : Printed circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Forward current transfer ratio h
• A shunt resistor is omitted from the driver.
• M type package allowing easy automatic and manual insertion as
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1198
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
priate to the driver circuit of motors and printer hammer: h
000 to 20 000.
well as stand-alone fixing to the printed circuit board.
2. * 1: Pulse measurement
board thickness of 1.7 mm for the collector portion
* 2: Rank classification
Rank
Parameter
Parameter
h
FE
4 000 to 10 000 8 000 to 20 000
2SD1198
2SD1198A
2SD1198A
*
2SD1198
2SD1198A
2SD1198
2SD1198A
* 1, 2
Q
* 1
FE
* 1
is designed high, which is appro-
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
I
C
stg
CE(sat)
BE(sat)
C
h
CBO
EBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
R
−55 to +150
Rating
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
150
2
CB
1.5
CB
CB
EB
CE
30
60
25
50
= 100 µA, I
= 100 µA, I
= 1 mA, I
= 1 A, I
= 1 A, I
5
1
1
or more, and the
SJC00209BED
= 4 V, I
= 10 V, I
= 10 V, I
= 25 V, I
= 45 V, I
B
B
= 1 mA
= 1 mA
B
C
Conditions
E
Unit
C
E
E
= 0
C
= 0
FE
°C
°C
E
W
V
V
V
A
A
= −50 mA, f = 200 MHz
= 0
= 0
= 1 A
= 0
= 0
= 4
Internal Connection
R 0.7
(1.5)
3
(2.5)
B
(0.85)
0.55
4 000
6.9
(1.5)
Min
30
60
25
50
5
±0.1
±0.1
2
R 0.9
(2.5)
1
Typ
≈ 200 Ω
150
20 000
Max
100
100
1.8
2.2
2.5
M-A1 Package
C
E
±0.1
1: Base
2: Collector
3: Emitter
0.45
Unit: mm
(1.0)
±0.05
MHz
Unit
nA
nA
V
V
V
V
V
1