2sd1115 Inchange Semiconductor Company, 2sd1115 Datasheet
2sd1115
Manufacturer Part Number
2sd1115
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1115.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
·High DC Current Gain
APPLICATIONS
·Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: V
: h
V
V
V
T
I
P
T
CBO
CEO
EBO
I
CP
stg
C
C
FE
J
CEO(SUS)
Silicon NPN Darlington Power Transistor
= 500(Min)@I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 300V(Min)
C
=25℃
PARAMETER
C
= 2A
a
=25
℃)
-55~150
VALUE
400
300
150
40
7
3
6
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SD1115
Related parts for 2sd1115
2sd1115 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Collector Current-Peak CP Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn =25 ℃) a VALUE UNIT 400 V 300 ℃ 150 ℃ -55~150 isc Product Specification 2SD1115 ...
Page 2
... I = 0.1mA 50mA 2A 20mA 2A 20mA ∞ 300V 2A 2A 20mA Product Specification 2SD1115 MIN TYP. MAX UNIT 300 V 400 1.5 V 2.0 V μA 100 500 μs 1.0 μs 22 ...