2sd1993 Panasonic Corporation of North America, 2sd1993 Datasheet
2sd1993
Manufacturer Part Number
2sd1993
Description
Silicon Npn Epitaxial Planer Type For Low-frequency And Low-noise Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1993.pdf
(3 pages)
Transistors
2SD1993
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
• Low noise voltage NV
• High forward current transfer ratio h
• Allowing supply with the radial taping
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
210 to 340
*
R
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
C
CE(sat)
NV
C
h
CBO
290 to 460
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
S
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
R
C
C
E
C
100
200
400
150
g
CB
CE
CE
CB
CE
55
55
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 100 mA, I
7
= 100 kΩ, Function = FLAT
SJC00236BED
= 20 V, I
= 10 V, I
= 10 V, I
= 20 V, I
= 10 V, I
360 to 650
B
T
C
E
Conditions
Unit
mW
B
C
E
E
C
mA
mA
= 0
°C
°C
= 0
= 0
B
V
V
V
= 0
= 0
= 2 mA
= −2 mA, f = 200 MHz
= 1 mA, G
= 10 mA
V
= 80 dB
0.65 max.
0.45
(0.7)
2.5
+0.10
–0.05
±0.5
1
(4.0)
Min
210
6.9
55
55
7
2
±0.1
3
2.5
Typ
200
±0.5
1.05
±0.05
MT-1-A1 Package
Max
650
150
0.1
1
1
0.45
1: Emitter
2: Collector
3: Base
2.5
Unit: mm
(0.8)
+0.10
–0.05
±0.1
MHz
Unit
mV
µA
µA
V
V
V
V
1
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2sd1993 Summary of contents
Page 1
... Transistors 2SD1993 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification ■ Features • Low noise voltage NV • High forward current transfer ratio h • Allowing supply with the radial taping ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 0.1 25°C −25°C 0.01 0 100 ( mA ) Collector current I C MHz = 25° ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...