as7c1024c Alliance Memory, Inc, as7c1024c Datasheet - Page 2

• Manufacturer Part Number: as7c1024c
• Description: 5v 128k X 8 Cmos Sram
• Manufacturer: Alliance Memory, Inc

12/5/06, v. 1.0
Truth table
Functional description
The AS7C1024C is a 5V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized
as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing
are desired.
Equal address access and cycle times (t
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank
systems.
When CE1 is high or CE2 is low, the devices enter standby mode. If inputs are still toggling, the device will consume I
power. If the bus is static, then full standby power is reached (I
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0
through I/O7 is written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2).
To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE)
or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high.
The chips drive I/O pins with the data word referenced by the input address. When either chip enable is inactive, output enable
is inactive, or write enable is active, output drivers stay in high-impedance mode.
Absolute maximum ratings
Note:
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Key: X = don’t care, L = low, H = high.
Voltage on V
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with V
DC current into outputs (low)
CE1
H
X
L
L
L
CC
relative to GND
Parameter
CE2
X
H
H
H
L
CC
applied
WE
X
X
H
H
L
AA
, t
RC
Alliance Memory
, t
WC
OE
X
X
H
L
X
) of 12 ns with output enable access times (t
Symbol
T
I
T
V
V
OUT
P
bias
stg
D
t1
t2
SB1
).
®
High Z
High Z
High Z
–0.50
–0.50
D
Data
Min
–55
–55
D
OUT
–
–
IN
V
OE
CC
+125
+125
Max
+7.0
1.25
) of 6 ns are ideal for high
Output disable (I
Standby (I
Standby (I
50
+0.50
Write (
Read (I
Mode
AS7C1024C
P. 2 of 9
SB
SB
ICC
CC
, I
, I
)
)
SB1
SB1
CC
Unit
mA
)
)
°C
°C
W
)
V
V
SB