as6c8016 Alliance Memory, Inc, as6c8016 Datasheet - Page 8

• Manufacturer Part Number: as6c8016
• Description: 512k X 8 Bit Low Power Cm 512k X 16 Bit Super Low Power Cmos Sram
• Manufacturer: Alliance Memory, Inc

DATA RETENTION CHARACTERISTICS
V
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
t
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1)
Low Vcc Data Retention Waveform (2)
RC
LB#,UB#
CC
CE#
*
Vcc
Vcc
= Read Cycle Time
NOVEMBER/2007, V 1.0
January 2007
NOVEMBER 2007
for Data Retention
PARAMETER
Vcc(min.)
Vcc(min.)
SYMBOL
V
V
t
IH
t
IH
t
V
CDR
CDR
I
CDR
512K X 16 BIT SUPER LOW POWER CMOS SRAM
t
DR
DR
R
CE# V
V
CE#
Other pins at 0.2V or V
See Data Retention
Waveforms (below)
CC
= 2.0V
> _
> _
(CE# controlled)
(LB#, UB# controlled)
Alliance Memory Inc.
LB#,UB#
V
CC
CE#
CC
TEST CONDITION
V
V
- 0.2V
-0.2V
DR
DR
> _
> _
> _
Vcc-0.2V
> _
512K X 8 BIT LOW POWER CMOS SRAM
2.0V
2.0V
Vcc-0.2V
CC
-0.2V
-I
Vcc(min.)
Vcc(min.)
t
t
R
R
V
V
MIN.
IH
IH
t
2.0
RC
0
-
*
TYP.
5
-
-
-
Page 8 of 12
MAX.
AS6C8016
5.5
50
-
-
UNIT
µ A
ns
ns
V