bs62lv1600 Brillance Semiconductor, bs62lv1600 Datasheet - Page 6

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bs62lv1600

Manufacturer Part Number
bs62lv1600
Description
Very Low Power Cmos Sram 2m X 8 Bit
Manufacturer
Brillance Semiconductor
Datasheet

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n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (WRITE CYCLE)
R0201-BS62LV1600
WRITE CYCLE
WRITE CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
E1LWH
WLWH
WHAX
E2LAX
DVWH
WHDX
WHQX
AVWL
AVWH
WLQZ
GHQZ
AVAX
ADDRESS
OE
CE1
CE2
WE
D
D
OUT
IN
PARANETER
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WR1
WR2
WHZ
OHZ
WC
CW
DW
OW
(1)
AW
WP
DH
AS
Write Cycle Time
Address Set up Time
Address Valid to End of Write
Chip Select to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
DESCRIPTION
t
t
AS
OHZ
A
(4,10)
= -40
(5)
O
(5)
C to +85
6
(CE1, WE)
t
AW
(CE2)
t
t
O
t
CW
CW
t
WP
C)
WC
(11)
(11)
(2)
CYCLE TIME : 55ns
MIN. TYP. MAX.
55
40
40
30
25
--
--
0
0
0
0
5
(V
CC
t
= 3.0~5.5V)
DW
--
--
--
--
--
--
--
--
--
--
--
--
t
t
25
25
--
--
--
--
--
--
--
--
--
--
WR1
WR2
t
DH
(3)
(3)
CYCLE TIME : 70ns
MIN. TYP. MAX.
70
50
50
35
30
--
--
0
0
0
0
5
(V
BS62LV1600
CC
= 2.7~5.5V)
--
--
--
--
--
--
--
--
--
--
--
--
30
30
Revision
May.
--
--
--
--
--
--
--
--
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
2.3

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