bs62uv4000 Brillance Semiconductor, bs62uv4000 Datasheet - Page 3

• Manufacturer Part Number: bs62uv4000
• Description: Ultra Power/voltage Cmos Sram 512k
• Manufacturer: Brillance Semiconductor

R0201-BS62UV4000
1. Vcc = 1.5V, T
2. t
DATA RETENTION CHARACTERISTICS
LOW V
PARAMETER
1. Typical characteristics are at TA = 25
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
DC ELECTRICAL CHARACTERISTICS
Vcc
CE
SYMBOL
RC
NAME
I
= Read Cycle Time
I
t
V
CCDR
I
CCSB1
V
CDR
V
CCSB
t
V
I
V
I
DR
R
I
OL
CC
OH
IL
OL
IH
IL
CC
BSI
DATA RETENTION WAVEFORM
RC
A
.
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
= + 25
Operating Power Supply
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Current
Standby Current-CMOS
Standby Current-TTL
PARAMETER
O
PARAMETER
C
(2)
(2)
o
C.
V
IH
t
Vcc
CDR
Vcc = Min, I
Vcc = Max, V
Vcc = Max, CE = V
V
Vcc = Max, I
CE = V
CE = V
CE
V
I/O
IN
CE
V
CE
V
See Retention Waveform
IN
IN
= 0V to Vcc
( TA = 0 to + 70
( TA = 0 to + 70
Vcc-0.2V,
IL
IH
Vcc - 0.2V or V
, I
, I
TEST CONDITIONS
Vcc - 0.2V or V
Vcc - 0.2V or V
( CE Controlled )
Vcc - 0.2V
Vcc - 0.2V
TEST CONDITIONS
DQ
DQ
OH
= 0mA, F = Fmax
OL
= 0mA
IN
= -0.5mA
= 1mA
= 0V to Vcc
Data Retention Mode
3
CE
IH
V
, or OE = V
≥
DR
Vcc - 0.2V
o
IN
≥
C )
o
IN
IN
1.5V
C )
0.2V
(3)
0.2V
0.2V
IH
,
Vcc = 2.0 V
Vcc = 3.0 V
Vcc = 2.0 V
Vcc = 3.0 V
Vcc = 2.0 V
Vcc = 2.0 V
Vcc = 3.0 V
Vcc = 2.0 V
Vcc = 3.0 V
Vcc = 2.0 V
Vcc = 2.0 V
Vcc = 3.0 V
Vcc = 3.0 V
Vcc = 3.0 V
MIN.
T
Vcc
1.5
RC
--
0
t
(2)
R
-0.5
1.4
2.0
1.6
2.4
V
--
--
--
--
--
--
MIN. TYP.
IH
TYP.
0.1
BS62UV4000
--
--
--
(1)
0.25
0.2
--
--
--
--
--
--
--
--
(1)
MAX.
MAX.
--
--
--
1
Vcc+0.2
15
0.6
0.8
0.4
20
1
1.5
0.6
--
1
1
1
Revision 2.4
April 2002
UNITS
uA
UNITS
ns
ns
V
mA
mA
uA
uA
uA
V
V
V
V