blf6g10-160rn NXP Semiconductors, blf6g10-160rn Datasheet - Page 2

• Manufacturer Part Number: blf6g10-160rn
• Description: Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G10-160RN_10LS-160RN_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G10-160RN (SOT502A)
1
2
3
BLF6G10LS-160RN (SOT502B)
1
2
3
Type number
BLF6G10-160RN
BLF6G10LS-160RN -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name Description
-
Rev. 01 — 20 January 2009
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
BLF6G10(LS)-160RN
Simplified outline
1
1
2
2
3
Power LDMOS transistor
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
2
2
Max
65
+13
39
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 11
Unit
V
V
A
C
C