blf6g10-160rn NXP Semiconductors, blf6g10-160rn Datasheet - Page 9

• Manufacturer Part Number: blf6g10-160rn
• Description: Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G10-160RN_10LS-160RN_1
Product data sheet
Document ID
BLF6G10-160RN_10LS-160RN_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
LDMOST
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
Abbreviations
Release date
20090120
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 01 — 20 January 2009
Data sheet status
Product data sheet
BLF6G10(LS)-160RN
Change notice
-
Power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
Supersedes
-
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