bga735l16 Infineon Technologies Corporation, bga735l16 Datasheet - Page 31

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bga735l16

Manufacturer Part Number
bga735l16
Description
High Linearity Tri-band Umts Lna
Manufacturer
Infineon Technologies Corporation
Datasheet

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Quantity
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Manufacturer:
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3
3.1
Figure 2
Note: Package paddle (Pin 0) has to be RF grounded.
Table 14
Part Number
L1 ... L3
C1 ... C7
RREF
Data Sheet
Band II
Band I
RFIN
RFIN
Application Circuit and Block Diagram
UMTS bands I, II and V Application Circuit Schematic
Application circuit with chip outline (top view)
Parts List
10 pF
10 pF
C1
C3
Part Type
Chip inductor
Chip capacitor
Chip resistor
Band V
RFIN
3.3nH
2.7nH
22 pF
22 pF
L1
C2
L2
C4
L1
L1
3.0pF
C5
22pF
RFINH
RFINM
RFGNDM
0
5
6
7
8
9
C6
n/c
n/c
GND
9.1 nH
L3
L1
Manufacturer
Various
Various
Various
10
4
RFGNDH
RFINL
10nF
C7
V
BGA735L16 - Low Power Tri-Band UMTS LNA
EN
31
UMTS bands I, II and V Application Circuit Schematic
V
= 0 / 2.8V
CC
11
3
= 2.8V
Biasing & Logic
VEN2
VCC
Circuitry
V
Size
0402
0402
0402
V
GS
EN
= 0 / 2 .8V
12
= 0 / 2 .8V
Application Circuit and Block Diagram
2
BGA735 L16 _Appl _Bands125 _BlD.vsd
VEN1
VGS
RFOUTM
RFOUTH
RFOUTL
RREF
n /c
16
15
14
13
1
Comment
Wirewound, Q
R
27k
REF
RFOUT
Band II
RFOUT
Band I
RFOUT
Band V
V3.0, 2008-08-26
50

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