njg1129md7 New Japan Radio Co.,Ltd, njg1129md7 Datasheet

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njg1129md7

Manufacturer Part Number
njg1129md7
Description
Uhf Band Low Noise Amplifier Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet

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[High gain mode]
[Low gain mode]
Ver.2008-08-01
Note: Specifications and description listed in this datasheet are subject to change without notice.
designed for mobile digital TV application (470~770 MHz).
gain mode or low gain mode by single bit control.
achieve high ESD tolerance.
GENERAL DESCRIPTION
TRUTH TABLE
FEATURES
PIN CONFIGURATION
The NJG1129MD7 is a low noise amplifier GaAs MMIC
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
Also, the ESD protection circuit is integrated into the IC to
This IC has a LNA pass-through function to select high
Low voltage operation
Low voltage control
Package
Low current consumption
High gain
Low noise figure
High input IP3
Low current consumption
Gain
High input IP3
12
13
14
11
1
V
H
CTL
L
circuit
circuit
Logic
Bias
10
(Top View)
2
“H”=V
Bypass circuit
LNA circuit
High Gain mode
Low Gain mode
9
3
CTL(H)
LNA Mode
+2.8V typ.
+1.85V typ.
EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
5.0mA typ.
15.0dB typ.
1.4dB typ.
+1.0dBm typ.
16 µ A typ.
-4.0dB typ.
+20.0dBm typ.
, “L”=V
8
4
7
6
5
CTL(L)
Pin Connection
1. GND
2. GND
3. VINV
4. GND
5. GND
6. GND
7. RFOUT
* Exposed PAD: GND
PACKAGE OUTLINE
NJG1129MD7
8. GND
9. GND
10. GND
11. GND
12. RFIN
13. GND
14. VCTL
NJG1129MD7
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njg1129md7 Summary of contents

Page 1

... UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG1129MD7 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance ...

Page 2

... NJG1129MD7 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain voltage Inverter voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: V PARAMETERS SYMBOL Operating voltage Inverter voltage Control voltage (High) Control voltage (Low) Operating current1 Operating current2 ...

Page 3

... RF RF IIP3_1 P =-25dBm IN =2.8V, V =0V, T =+25°C, Z INV CTL a CONDITIONS f RF Exclude PCB & connector Gain2 losses*2 2 -1dB(IN) f1=f , f2=f +100kHz IIP3_2 P =-12dBm IN NJG1129MD7 =Z =50 ohm, with application circuit s l MIN TYP MAX 470 620 770 11.0 15.0 19.0 - 1.4 1.9 -14.0 -6.0 - -6.0 +1 1.5 4.5 - 1.5 2.8 =Z =50 ohm, with application circuit ...

Page 4

... NJG1129MD7 TERMINAL INFORMATION No. SYMBOL Ground terminal. These terminals should be connected to the ground 10, GND plane as close as possible for excellent RF performance. 11 VINV Inverter voltage supply terminal. RF Output terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this. Inductor L4 as ...

Page 5

... IIP3=+4.5dBm 400 400 650 700 750 800 NJG1129MD7 =50 ohm, with application circuit l Gain, IDD vs. Pin (f=620MHz) Gain IDD P-1dB(IN)=-6.0dBm -35 -30 -25 -20 -15 -10 Pin (dBm) Gain, NF vs. Frequency Gain NF (Exclude PCB, Connector Losses) 450 500 ...

Page 6

... NJG1129MD7 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25° K-factor vs. Frequency 5000 10000 Frequency (MHz) P-1dB(IN) vs. VDD=VINV (f=620MHz P-1dB(IN) -10 - VDD (V) IDD vs. VDD=VINV IDD VDD ( =2.8V, V =1.85V INV CTL s 20 ...

Page 7

... ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25°C, V =2.8V IDD vs. VCTL 0.5 1 VCTL (V) =Z =50 ohm, with application circuit s l 1.5 2 NJG1129MD7 - 7 - ...

Page 8

... NJG1129MD7 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions =2.8V INV Gain, NF vs. Temp. (fRF=620MHz) 20 Gain -50 0 Temperature ( IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-25dBm OIP3 15 10 IIP3 5 0 -50 0 Temperature ( VSWR vs. Temp. (fRF=470~770MHz VSWRi(max VSWRo(max.) ...

Page 9

... ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25° VSWR (50MHz~20GHz =2.8V, V =1.85V =50 ohm, with application circuit INV CTL s l NJG1129MD7 Zin, Zout (50MHz~20GHz ...

Page 10

... NJG1129MD7 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T =+25° Pout vs. Pin (f=620MHz -10 -15 -20 Pout -25 -30 -35 P-1dB(IN)=+13.3dBm -40 -40 -30 -20 -10 Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz -20 Pout -40 -60 IM3 -80 -100 -40 -30 -20 -10 Pin (dBm) P-1dB(IN) vs. Frequency 15 P-1dB(IN) ...

Page 11

... C) 3 2.5 2 1.5 1 0.5 0 -50 50 100 o C) NJG1129MD7 Gain vs. Temp. (fRF=620MHz) Gain Temperature ( C) IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-12dBm) IIP3 OIP3 Temperature ( C) VSWR vs. Temp. (fRF=470~770MHz) VSWRi(max.) VSWRo(max Temperature ( C) 100 100 ...

Page 12

... NJG1129MD7 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T =+25° VSWR (50MHz~20GHz =2.8V, V =0V INV CTL s 22 =50 ohm, with application circuit Zin, Zout (50MHz~20GHz ...

Page 13

... Please place all external parts around the IC as close as possible Bypass circuit LNA circuit Bias circuit Logic circuit VINV VDD OUT L3 C2 VINV NJG1129MD7 22nH 5pF 7 RF OUT L4 15nH VDD 6 C3 1000pF 5 4 Parts List Parts ID Notes MURATA ...

Page 14

... NJG1129MD7 MEASUREMENT BLOCK DIAGRAM V =1.85V or 0.0V CTL V =1.85V or 0.0V CTL 2dB freq.1 Attenuator Signal Generator Signal Generator 2dB freq.2 Attenuator - Input RF Output DUT Network Analyzer S parameter Measurement Block Diagram RF Input RF Output DUT Noise Source NF Analyzer Noise Figure Measurement Block Diagram V =1.85V or 0.0V CTL ...

Page 15

... To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. NJG1129MD7 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions ...

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