njg1129md7 New Japan Radio Co.,Ltd, njg1129md7 Datasheet - Page 6
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njg1129md7
Manufacturer Part Number
njg1129md7
Description
Uhf Band Low Noise Amplifier Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet
1.NJG1129MD7.pdf
(15 pages)
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NJG1129MD7
- 6 -
Conditions: T
ELECTRICAL CHARACTERISTICS (High Gain mode)
-10
-15
15
10
-5
20
15
10
5
0
5
0
5
0
0
0
0
1
1
a
5000
P-1dB(IN)
P-1dB(IN) vs. VDD=VINV
=+25°C, V
K-factor vs. Frequency
IDD
IDD vs. VDD=VINV
Frequency (MHz)
2
2
(f=620MHz)
VDD (V)
VDD (V)
10000
DD
= V
3
3
INV
15000
=2.8V, V
4
4
CTL
20000
5
5
=1.85V, Z
20
15
10
25
20
15
10
-5
5
0
5
0
8
7
6
5
4
3
2
1
0
0
s
0
0
=Z
l
=50 ohm, with application circuit
(f1=620MHz, f2=620.1MHz, Pin=-25dBm)
1
1
1
IIP3, OIP3 vs. VDD=VINV
OIP3
Gain, NF vs. VDD=VINV
VSWRo(max.)
IIP3
VSWR vs. VDD=VINV
Gain
VSWRi(max.)
2
2
2
(f=620MHz)
VDD (V)
VDD (V)
VDD (V)
3
3
3
4
4
4
NF
5
4
3.5
3
2.5
2
1.5
1
0.5
0
5
5