sme1d EIC Semiconductor Incorporated, sme1d Datasheet
sme1d
Manufacturer Part Number
sme1d
Description
Glass Passivated Junction High Efficiency Rectifiers
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.SME1D.pdf
(2 pages)
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
For capacitive load, derate current by 20%.
Notes :
Page 1 of 2
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
SME1A -SME1M
* Glass passivated junction chip
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
* Case: JEDEC SOD-123FL, molded plastic
* Terminals: Solder Plated, solderable per
* Polarity: Color band denotes cathode end
* Mounting position : Any
* Weight: 0.02 gram (Approximate)
Marking
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
( 1 ) Reverse Recovery Test Conditions : I
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
over passivated chip
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
MIL-STD-750, Method 2026
RATING
F
= 1.0 A
Ta = 25 °C
Ta = 100 °C
Ta = 55 °C
F
= 0.5 A, I
R
SYMBOL SME1A SME1B SME1D SME1E SME1G SME1J SME1K SME1M UNIT
= 1.0 A, Irr = 0.25 A.
V
V
I
T
V
I
I
F(AV)
Trr
FSM
V
R(H)
C
T
RRM
RMS
I
STG
DC
R
F
J
J
DC
EA
50
35
50
HIGH EFFICIENT RECTIFIERS
100
100
EB
70
200
140
200
ED
1.1
50
SURFACE MOUNT
Dimensions in millimeters
TH97/10561QM
300
210
300
- 65 to + 150
- 65 to + 150
EE
SOD-123FL
1.0
5.0
30
50
50
400
280
400
EG
TW00/17276EM
600
420
600
EJ
Rev. 00 : January 21, 2008
1.7
800
560
800
EK
75
SGS TH07/1033
1000
1000
IATF 0060636
700
EM
2.2
µA
µA
pF
ns
°C
°C
V
V
V
A
A
V
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sme1d Summary of contents
Page 1
... Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range Notes : ( 1 ) Reverse Recovery Test Conditions : Measured at 1.0 MHz and applied reverse voltage of 4.0 V Page HIGH EFFICIENT RECTIFIERS SYMBOL SME1A SME1B SME1D SME1E SME1G SME1J SME1K SME1M UNIT 100 RRM V ...
Page 2
RATING AND CHARACTERISTIC CURVES ( SME1A - SME1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Vdc (approx) NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 ...