sme1d EIC Semiconductor Incorporated, sme1d Datasheet - Page 2

• Manufacturer Part Number: sme1d
• Description: Glass Passivated Junction High Efficiency Rectifiers
• Manufacturer: EIC Semiconductor Incorporated

Page 2 of 2
100
0.01
0.8
0.6
0.4
0.2
1.0
10
1.0
0.1
0
0.3
0
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
60Hz RESISTIVE OR INDUCTIVE LOAD
SME1A-SME1G
0.6
25
AMBIENT TEMPERATURE, (
RATING AND CHARACTERISTIC CURVES ( SME1A - SME1M )
FORWARD VOLTAGE, VOLTS
0.9
RECTIFIED CURRENT
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
+
50
1.2
(approx)
50 Vdc
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
75
1.5
50 Ω
1.8
100
2.1
Pulse Width = 300
μs
2% D t C l
SME1J-SEM1K
T
125
J
= 25 °C
1 Ω
2.4
SME1M
D.U.T.
10 Ω
150
2.7
°
C)
3.0
175
OSCILLOSCOPE
3.3
( NOTE 1 )
GENERATOR
( NOTE 2 )
PULSE
0.01
10
1.0
18
12
0.1
30
24
6
0
0
1
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
+ 0.5 A
0
- 0.25 A
- 1.0 A
20
2
PERCENT OF RATED REVERSE
NUMBER OF CYCLES AT 60Hz
TH97/10561QM
FORWARD SURGE CURRENT
8.3 ms SINGLE HALF SINE WAVE
40
1 cm
4
VOLTAGE, (%)
SET TIME BASE FOR 25-35 ns/cm
6
60
Trr
10
T
T
J
80
J
Ta = 50 °C
= 100 °C
= 25 °C
20
TW00/17276EM
100
Rev. 00 : January 21, 2008
40
120
60 100
140
SGS TH07/1033
IATF 0060636