k4t56163qi Samsung Semiconductor, Inc., k4t56163qi Datasheet - Page 25
k4t56163qi
Manufacturer Part Number
k4t56163qi
Description
256mb I-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4T56163QI.pdf
(42 pages)
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K4T56163QI
V
V
V
V
V
V
Setup Slew Rate
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Falling Signal
Figure 7 - IIIustration of tangent line for tDS (differential DQS, DQS)
DQS
DQS
max
max
min
min
V
nominal
SS
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF(dc)
line
25 of 42
Setup Slew Rate
tDH
Rising Signal
- Vil(ac)max]
nominal
line
=
tangent line[Vih(ac)min - V
∆TR
tDS
tangent
line
∆TR
tDH
V
REF
region
to ac
REF(dc)
Rev. 1.0 October 2007
]
DDR2 SDRAM