k4h560838f Samsung Semiconductor, Inc., k4h560838f Datasheet - Page 14

no-image

k4h560838f

Manufacturer Part Number
k4h560838f
Description
256mb F-die Ddr Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
k4h560838f-TCB3
Manufacturer:
SEC
Quantity:
37
Part Number:
k4h560838f-TCB3
Manufacturer:
SAMSUNG
Quantity:
1 000
Part Number:
k4h560838f-TCCC
Manufacturer:
SAMSUNG
Quantity:
487
Part Number:
k4h560838f-UCCC
Manufacturer:
SAMSUNG
Quantity:
218
Part Number:
k4h560838f-UCCC
Manufacturer:
SAMSUNG
Quantity:
1 000
DDR SDRAM 256Mb F-die (x8, x16)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.3 October, 2004
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Specification
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V

Related parts for k4h560838f