k4s511632b-ul75 Samsung Semiconductor, Inc., k4s511632b-ul75 Datasheet - Page 9

• Manufacturer Part Number: k4s511632b-ul75
• Description: 512mb B-die Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS (x8)
SDRAM 512Mb B-die (x4, x8, x16)
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S510832B-UC75
4. K4S510832B-UL75
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK dV
NS
PS CKE & CLK dV
NS
N
N
P
P
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
t
CKE d0.2V
Burst length = 1
t
I
I
Page burst
RC
RC
O
O
= 0 mA
= 0 mA
tt
tt
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70qC)
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
= f
= f
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
/V
= f
= f
SSQ)
C
L
Revision. 1.1 August 2004
Version
100
200
75
90
20
10
30
25
2
2
6
6
6
3
CMOS SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4