k4h1g0638c Samsung Semiconductor, Inc., k4h1g0638c Datasheet
k4h1g0638c
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k4h1g0638c Summary of contents
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... DDR SDRAM stacked 1Gb C-die (x4/x8) Stacked 1Gb C-die DDR SDRAM Specification 66 TSOP-II with Pb-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS " ...
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... Absolute Maximum Rating .....................................................................................................10 11.0 DC Operating Conditions ........................................................................................................10 12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11 13.0 Input/Output Capacitance ......................................................................................................11 14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12 15.0 DDR SDRAM IDD spec table ..................................................................................................13 16.0 AC Operating Conditions .......................................................................................................14 17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14 18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15 19.0 AC Timming Parameters & ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) Revision History Revision Month Year 0.0 January 2005 1.0 April 2005 1.1 June 2005 - First version for internal review - Revision 1.0 spec. release. - Changed master format. DDR SDRAM History Rev. 1.1 June. 2005 ...
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... Maximum burst refresh cycle : 8 • 66pin TSOP II Pb-Free package • RoHS compliant 2.0 Ordering Information Part No. K4H1G0638C-UC/LA2 K4H1G0638C-UC/LB0 K4H1G0738C-UC/LA2 K4H1G0738C-UC/LB0 3.0 Operating Frequencies Speed @CL2 Speed @CL2.5 Speed @CL3 CL-tRCD-tRP Org. Max Freq. ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 4.0 Pin Description DDQ SSQ DDQ SSQ DDQ CAS RAS CS0 CS1 AP/A AP Organization st.256Mx4 st.128Mx8 DM is internally loaded to match DQ and DQS identically. ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 5.0 Package Physical Dimension #66 #1 0.65 NOTE REFERENCE ASS’Y OUT QUALITY 6.0 Block Diagram CK,CK,CAS RAS,WE,DM 128Mx4 CKE1,CS1 128Mx4 CKE0,CS0 I/O0-I/O3,DQS st.256Mb x 4 #34 #33 22.62MAX 22.22 ± 0.10 0.25 (0.71) ± 0.08 66pin TSOPII / Package dimension CK,CK,CAS RAS,WE,DM CKE1,CS1 CKE0,CS0 A0-A12,BA0,BA1 ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 7.0 Input/Output Function Description SYMBOL TYPE CK, CK Input CKE Input CS Input RAS, CAS, WE Input LDM,(UDM) Input BA0, BA1 Input 12] Input DQ I/O LDQS,(U)DQS I VDDQ Supply VSSQ Supply VDD Supply VSS Supply VREF Input Clock : CK and CK are differential clock inputs. All address and control input signals are sam- pled on the positive edge of CK and negative edge of CK ...
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... DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges (Write UDM/LDM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM. CKEn-1 CKEn CS ...
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... Banks / st. 32M x 8Bit x 4 Banks Double Data Rate SDRAM 9.0 General Description The K4H1G0638C / K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864 / 4x 33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 12.0 DDR SDRAM Spec Items & Test Conditions Operating current - One bank Active-Precharge; tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ,DM and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A IDD1 : Operating current: One bank operation 1. Typical Case: For DDR200,266,333: Vdd = 2.5V, T=25°C; For DDR400: Vdd=2.6V,T=25°C Worst Case : Vdd = 2.7V, T= 10°C 2. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle ...
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... IDD4W IDD5 Normal IDD6 Low power IDD7A Symbol A2(DDR266@CL=2.0) IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A st.256Mx4 (K4H1G0638C) 125 155 170 175 225 10 6 370 st.128Mx8 (K4H1G0738C) 125 155 ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 16.0 AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and /CK inputs Input Crossing Point Voltage, CK and /CK inputs Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on /CK. ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot The area between the overshoot signal and VDD must be less than or equal to The area between the undershoot signal and GND must be less than or equal to ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 19.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in to Read command CL=2.0 Clock cycle time CL=2 ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 20.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 : Input Slew Rate for DQ, DQS, and DM ...
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... DQS will be transitioning from High logic LOW previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 15. For command/address input slew rate ≥ 1.0 V/ns 16. For command/address input slew rate ≥ ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) Component Notes 17. For CK & CK slew rate ≥ 1.0 V/ns 18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 19. Slew Rate is measured between VOH(ac) and VOL(ac). 20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH) ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) 22.0 System Notes a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. Output Figure 2 : Pullup slew rate test load b. Pulldown slew rate is measured under the test conditions shown in Figure 3. Output Figure 3 : Pulldown slew rate test load c ...
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... DDR SDRAM Output Driver V-I Characteristics DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1. Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input into simulation tools ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) Pulldown Current (mA) Typical Typical Voltage (V) Low High 0.1 6.0 6.8 0.2 12.2 13.5 0.3 18.1 20.1 0.4 24.1 26.6 0.5 29.8 33.0 0.6 34.6 39.1 0.7 39.4 44.2 0.8 43.7 49.8 0.9 47.5 55.2 1.0 51.3 60.3 1.1 54.1 65.2 1.2 56.2 69.9 1.3 57.9 74.2 1.4 59.3 78.4 1.5 60.1 82.3 1.6 60.5 85.9 1.7 61.0 89.1 1.8 61.5 92.2 1.9 62.0 95.3 2.0 62.5 97.2 2.1 62.9 99.1 2.2 63.3 100.9 2.3 63.8 101.9 2.4 64.1 102.8 2.5 64.6 103.8 2.6 64.8 104.6 2.7 65.0 105.4 Minimum Maximum 4.6 9.6 9.2 18.2 13.8 26.0 18.4 33.9 23.0 41.8 27.7 49.4 32.2 56.8 36.8 63.2 39.6 69.9 42.6 76.3 44.8 82.5 46.2 88.3 47.1 93.8 47.4 99.1 47.7 103.8 48.0 108.4 48.4 112.1 48.9 115.9 49.1 119.6 49.4 123.3 49.6 126.5 49.8 129.5 49.9 132.4 50.0 135.0 50.2 137.3 50.4 139.2 50.5 140.8 Table 8. Full Strength Driver Characteristics DDR SDRAM pullup Current (mA) ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8 0.0 Pullup Characteristics for Weak Output Driver 0.0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 Pulldown Characteristics for Weak Output Driver Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) 1.0 2.0 1.0 2.0 DDR SDRAM Maximum Typical High ...
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... DDR SDRAM stacked 1Gb C-die (x4/x8) Pulldown Current (mA) Typical Typical Voltage (V) Low High 0.1 3.4 3.8 0.2 6.9 7.6 0.3 10.3 11.4 0.4 13.6 15.1 0.5 16.9 18.7 0.6 19.6 22.1 0.7 22.3 25.0 0.8 24.7 28.2 0.9 26.9 31.3 1.0 29.0 34.1 1.1 30.6 36.9 1.2 31.8 39.5 1.3 32.8 42.0 1.4 33.5 44.4 1.5 34.0 46.6 1.6 34.3 48.6 1.7 34.5 50.5 1.8 34.8 52.2 1.9 35.1 53.9 2.0 35.4 55.0 2.1 35.6 56.1 2.2 35.8 57.1 2.3 36.1 57.7 2.4 36.3 58.2 2.5 36.5 58.7 2.6 36.7 59.2 2.7 36.8 59.6 Minimum Maximum 2.6 5.0 5.2 9.9 7.8 14.6 10.4 19.2 13.0 23.6 15.7 28.0 18.2 32.2 20.8 35.8 22.4 39.5 24.1 43.2 25.4 46.7 26.2 50.0 26.6 53.1 26.8 56.1 27.0 58.7 27.2 61.4 27.4 63.5 27.7 65.6 27.8 67.7 28.0 69.8 28.1 71.6 28.2 73.3 28.3 74.9 28.3 76.4 28.4 77.7 28.5 78.8 28.6 79.7 Table 9. Weak Driver Characteristics DDR SDRAM pullup Current (mA) Typical Typical Minimum Low High -3.5 -4.3 -2.6 -6.9 -8.2 -5.2 -10.3 -12.0 -7.8 -13.6 -15.7 -10.4 -16.9 -19.3 -13.0 -19.4 -22.9 -15.7 -21.5 -26.5 -18.2 -23.3 -30.1 -20.4 -24.8 -33.6 -21.6 -26.0 -37.1 -21.9 -27.1 -40.3 -22.1 -27.8 -43.1 -22.2 -28.3 -45.8 -22.3 -28.6 -48.4 -22.4 -28.7 -50.7 -22.6 -28.9 -52.9 -22.7 -28.9 -55.0 -22.7 -29.0 -56.8 -22.8 -29.2 -58.7 -22.9 -29.2 -60.0 -22.9 -29.3 -61.2 -23.0 -29.5 -62.4 -23.0 -29.5 -63.1 -23.1 -29.6 -63.8 -23.2 -29.7 -64.4 -23.2 -29.8 -65.1 -23.3 -29.9 -65.8 -23.3 Rev. 1.1 June. 2005 Maximum -5.0 -9.9 -14.6 -19.2 -23.6 -28.0 -32.2 -35.8 -39.5 -43.2 -46.7 -50.0 -53.1 -56.1 -58.7 -61.4 -63.5 -65.6 -67.7 -69.8 -71.6 -73.3 -74.9 -76.4 -77.7 -78.8 -79.7 ...