m464s1724dts Samsung Semiconductor, Inc., m464s1724dts Datasheet - Page 4

• Manufacturer Part Number: m464s1724dts
• Description: 16mx64 Sdram Sodimm Based On 8mx16,4banks,4k Refresh,3.3v Synchronous Drams With Spd
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
Note :
M464S1724DTS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS , CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC.The overshoot voltage duration is 3ns.
supply relative to Vss
Parameter
0
~ A
(V
DD
11
V
IN
, BA0 ~ BA1)
= 3.3V, T
V
DDQ
.
A
Symbol
= 23 C, f = 1MHz, V
V
V
V
V
V
I
DD
OH
OL
LI
IH
IL
V
V
Symbol
Symbol
DD
I N
C
Min
-0.3
C
C
C
C
C
C
-10
T
3.0
2.0
2.4
, V
I
OUT
, V
P
-
STG
I N 1
I N 2
I N 3
I N 4
I N 5
I N 6
OS
D
REF
OUT
DDQ
SS
= 0V, T
= 1.4V
3ns.
A
Typ
3.3
3.0
200 mV)
= 0 to 70 C)
0
-
-
-
Min
25
25
15
15
15
10
10
V
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
PC133/PC100 SODIMM
50
8
Max
45
45
25
21
25
12
12
Rev. 0.1 Sept. 2001
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
V
V
Note
Unit
C
= -2mA
= 2mA
pF
pF
pF
pF
pF
pF
pF
1
2
3