m464s1724dts Samsung Semiconductor, Inc., m464s1724dts Datasheet - Page 5

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m464s1724dts

Manufacturer Part Number
m464s1724dts
Description
16mx64 Sdram Sodimm Based On 8mx16,4banks,4k Refresh,3.3v Synchronous Drams With Spd
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
M464S1724DTS
Notes :
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
I
I
I
I
CC2
CC3
Sym-
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
b o l
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
I H
I H
IL
I H
I H
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
V
V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
=
=
/V
IL
=V
CC
CC
CC
CC
DDQ
= 10ns
= 10ns
=
=
/V
SSQ
C
L
)
1000
PC133/PC100 SODIMM
-7C
560
680
-7A
520
680
920
Version
Rev. 0.1 Sept. 2001
160
240
200
6.4
16
16
80
40
40
16
520
640
880
-1H
-1L
520
640
880
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2

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