m464s1724ius Samsung Semiconductor, Inc., m464s1724ius Datasheet - Page 7

• Manufacturer Part Number: m464s1724ius
• Description: Sdram Unbuffered Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
128MB Unbuffered SODIMM
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Notes :
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
DD
IH
IL
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
Parameter
0
~ A
(V
DD
11
, BA0 ~ BA1)
IN
= 3.3V, T
≤ V
DDQ
A
.
Symbol
= 23°C, f = 1MHz, V
V
V
V
V
V
I
DD
OH
OL
LI
IH
IL
Symbol
C
C
C
C
C
C
C
V
OUT
V
IN1
IN2
IN3
IN4
IN5
IN6
Symbol
DD
IN
Min
-0.3
-10
T
3.0
2.0
2.4
, V
I
, V
P
-
STG
OS
REF
D
OUT
DDQ
SS
= 1.4V ± 200 mV)
= 0V, T
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
Min
25
25
15
15
15
10
10
1.0 * # of component
M464S1724IUS
V
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
50
Synchronous DRAM
Rev. 1.0 February 2006
Unit
Max
uA
45
45
25
21
25
12
12
V
V
V
V
V
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF
pF
pF
pF