m464s1724ius Samsung Semiconductor, Inc., m464s1724ius Datasheet - Page 8

• Manufacturer Part Number: m464s1724ius
• Description: Sdram Unbuffered Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

(Recommended operating condition unless otherwise noted, T
128MB Unbuffered SODIMM
M464S1724IUS (16M x 64, 128MB Module)
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
DC CHARACTERISTICS
Notes :
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE ≤ 0.2V
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
A
Test Condition
(max), t
(max), t
CC
CC
= 0 to 70°C)
= 10ns
= 10ns
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
=∞
=∞
CC
CC
CC
CC
= 10ns
= 10ns
=∞
=∞
C
L
Synchronous DRAM
Rev. 1.0 February 2006
Version
520
160
240
200
680
920
-7A
6.4
16
16
80
40
40
16
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2