m470t6464az3 Samsung Semiconductor, Inc., m470t6464az3 Datasheet - Page 14
![no-image](/images/no-image-200.jpg)
m470t6464az3
Manufacturer Part Number
m470t6464az3
Description
Ddr2 Unbuffered Sodimm 200pin Unbuffered Sodimm Based On 1gb A-die 64-bit Non-ecc
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M470T6464AZ3.pdf
(20 pages)
- Current page: 14 of 20
- Download datasheet (440Kb)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.3 M470T5669AZ0: 256Mx64 1GB Module
SODIMM
IDD3P-S
IDD3P-F
Symbol
IDD2Q
IDD4W
IDD2P
IDD2N
IDD3N
IDD4R
IDD0
IDD1
IDD5
IDD6
IDD7
CE6
240
240
667@CL=5
1,080
1,160
1,600
1,600
2,120
2,760
720
720
640
288
840
LE6
128
96
CD5
240
240
533@CL=4
1,040
1,120
1,400
1,400
2,080
2,600
720
720
560
288
840
14 of 20
LD5
128
96
CCC
240
240
400@CL=3
1,000
1,080
1,240
1,240
2,000
2,400
640
640
560
288
760
LCC
128
96
Rev. 1.4 March 2007
DDR2 SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(T
A
=0
o
C, VDD= 1.9V)
Notes
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