hys64d128021 Infineon Technologies Corporation, hys64d128021 Datasheet - Page 13

• Manufacturer Part Number: hys64d128021
• Description: 200-pin Small Outline Dual-in-line Memory Modules
• Manufacturer: Infineon Technologies Corporation

Table 7
Parameter
Input Leakage Current
Output Leakage Current
Output High Current,
Normal Strength Driver
Output Low
Current, Normal Strength
Driver
1) 0 °C ≤
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions,
4) Peak to peak AC noise on
5)
6)
7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
8) Inputs are not recognized as valid until
9) Values are shown per component
Data Sheet
V
to
V
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
TT
ID
V
is the magnitude of the difference between the input level on CK and the input level on CK.
REF
is not applied directly to the device.
T
, and must track variations in the DC level of
A
≤ 70 °C
Electrical Characteristics and DC Operating Conditions (cont’d)
V
DDQ
V
must be less than or equal to
Symbol
I
I
I
I
REF
I
OZ
OH
OL
may not exceed ± 2% V
Min.
–2
–5
—
16.2
V
V
REF
TT
is a system supply for signal termination resistors, is expected to be set equal
stabilizes.
V
Typ.
REF
Values
REF (DC)
V
13
.
DD
.
. V
Max.
2
5
–16.2
—
REF
Small Outline DDR SDRAM Modules
is also expected to track noise variations in
HYS64D128021[H/G]BDL–[5/6]–B
Unit Note/Test Condition
µA
µA
mA
mA
Any input 0 V ≤
All other pins not under test
= 0 V
DQs are disabled;
0 V ≤
V
V
OUT
OUT
Electrical Characteristics
V
8)9)
= 1.95 V
= 0.35 V
OUT
Rev. 0.5, 2003-12
≤
V
DDQ
V
IN
≤
1)
V
V
DD
DDQ
;
.