hys64d128021 Infineon Technologies Corporation, hys64d128021 Datasheet - Page 15
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hys64d128021
Manufacturer Part Number
hys64d128021
Description
200-pin Small Outline Dual-in-line Memory Modules
Manufacturer
Infineon Technologies Corporation
Datasheet
1.HYS64D128021.pdf
(23 pages)
Table 9
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
1) Module
2) Test condition for maximum values:
3) The module
4) DQ I/O (
5) The module
Data Sheet
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7
capacity.
m ×
modules
I
DDx
I
I
DD
[component] + n ×
DDQ
I
DD
values are calculated on the basis of component
I
I
) currents are not included in the calculations
DDx
DDx
Specification for HYS64D128021[H/G]BDL–[5/6]–B
values are calculated from the
values are calculated from the corrponent
1 GB
×64
2 Ranks
–5
typ.
tbd
1136
1256
48
480
304
192
672
1296
1336
2296
3096
I
DD3N
[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
max.
tbd
1360
1520
80
576
416
256
800
1560
1600
2760
3680
V
DD
= 2.7 V,
I
DDx
T
1 GB
×64
2 Ranks
–6
typ.
tbd
A
1016
1136
48
400
272
176
592
1136
1176
2056
2776
= 10 °C
values of the component data sheet as follows:
15
I
I
DDx
DD
and can be measured differently according to DQ loading
data sheet values as: (m + n) ×
max.
tbd
1232
1352
64
480
384
240
704
1352
1392
2472
3272
Small Outline DDR SDRAM Modules
HYS64D128021[H/G]BDL–[5/6]–B
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Electrical Characteristics
I
DDx
Note
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
Rev. 0.5, 2003-12
[component]
1)2)