m2732af6 STMicroelectronics, m2732af6 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
m2732af6
Manufacturer Part Number
m2732af6
Description
Nmos 32k 4k X 8 Uv Eprom
Manufacturer
STMicroelectronics
Datasheet
1.M2732AF6.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M2732AF6
Manufacturer:
ST
Quantity:
6 100
Company:
Part Number:
M2732AF6
Manufacturer:
ST
Quantity:
6 100
Company:
Part Number:
M2732AF6
Manufacturer:
TOYO
Quantity:
9 000
M2732A
Table 7. Programming Mode DC Characteristics
(T
Note: 1. V
Table 8. Programming Mode AC Characteristics
(T
Note: 1. V
6/9
t
A
A
Symbol
VPL1VPL2
t
t
t
t
t
t
t
t
EHVPX
t
t
VPHEL
VPLEL
= 25 C; V
= 25 C; V
EHQX
EHQZ
EHAX
Symbol
QVEL
ELEH
ELQV
AVEL
V
V
I
V
V
I
I
CC
PP
LI
OH
OL
IL
IH
CC
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
t
t
t
t
Alt
t
t
OEH
t
t
t
CC
t
OES
PRT
t
CC
DS
PW
DH
VR
DV
AH
AS
DF
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
= 5V
= 5V
Address Valid to Chip Enable
Low
Input Valid to Chip Enable Low
V
V
Chip Enable Program Pulse
Width
Chip Enable High to Input
Transition
Chip Enable High to V
Transition
V
Chip Enable Low to Output
Valid
Chip Enable High to Output
Hi-Z
Chip Enable High to Address
Transition
PP
PP
PP
Parameter
5%; V
5%; V
High to Chip Enable Low
Rise Time
Low to Chip Enable Low
Parameter
PP
PP
= 21V
= 21V
PP
0.5V)
0.5V)
E = V
Test Condition
E = V
V
I
PP
PP
OH
I
IL
OL
and removed simultaneously or after V
and removed simultaneously or after V
= –400 A
IL
= 2.1mA
IL
V
, G = V
, G = V
IN
(1)
(1)
Test Condition
E = V
V
IH
PP
IL
IL
, G = V
IL
–0.1
Min
2.4
2
Min
50
45
2
2
2
2
2
2
0
0
PP
PP
.
.
V
CC
Max
0.45
125
0.8
30
10
+ 1
Max
130
55
1
Units
mA
mA
V
V
V
V
Units
A
ms
ns
ns
ns
s
s
s
s
s
s
s