m366s3253cts Samsung Semiconductor, Inc., m366s3253cts Datasheet - Page 4

• Manufacturer Part Number: m366s3253cts
• Description: 32mx64 Sdram Dimm Based 32mx8, 4banks, Refresh, 3.3v Synchronous Drams With
• Manufacturer: Samsung Semiconductor, Inc.

M366S3253CTS
Note :
ABSOLUTE MAXIMUM RATINGS
Recommended operating conditions (Voltage referenced to V
DC OPERATING CONDITIONS AND CHARACTERISTICS
Notes :
CAPACITANCE
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A12, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0)
Clock (CLK0, CLK2)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
Parameter
supply relative to Vss
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ.
A
V
= 23 C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
C
C
IN
C
C
T
C
DQM
ADD
OUT
CKE
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
D
-
OUT
REF
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
3.3
3.0
PC133/PC100 Unbuffered DIMM
0
-
-
-
Min
30
30
30
25
16
8
6
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
50
8
Max
40
40
40
30
25
10
8
REV. 0.1 Sept. 2001
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
Unit
V
V
C
Note
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3