m366s3253cts Samsung Semiconductor, Inc., m366s3253cts Datasheet - Page 5
m366s3253cts
Manufacturer Part Number
m366s3253cts
Description
32mx64 Sdram Dimm Based 32mx8, 4banks, Refresh, 3.3v Synchronous Drams With
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M366S3253CTS.pdf
(11 pages)
(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS
M366S3253CTS
Operating current
(One bank active)
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(min), CS
(min), CLK
(max), t
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
V
V
= 0 to 70 C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
PC133/PC100 Unbuffered DIMM
= 10ns
= 10ns
/V
=
=
SSQ
).
C
L
1,760 1,600 1,520 1,520
-7C
800
880
720
880
-7A
Version
REV. 0.1 Sept. 2001
160
240
200
16
16
80
48
48
24
12
720
800
-1H
720
800
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2