m366s6453cts Samsung Semiconductor, Inc., m366s6453cts Datasheet
m366s6453cts
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m366s6453cts Summary of contents
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... GENERAL DESCRIPTION The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S6453CTS consists of sixteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate ...
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... M366S6453CTS PIN CONFIGURATION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable A0 ~ A12 Address BA0 ~ BA1 Bank select address RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 Data input/output mask DQ0 ~ 63 Data input/output V /V Power supply/ground ...
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... M366S6453CTS FUNCTIONAL BLOCK DIAGRAM CS1 CS0 DQM0 DQM CS DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 U0 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 DQM1 DQM CS DQ8 DQ0 DQ9 DQ1 DQ10 DQ2 U1 DQ11 DQ3 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 ...
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... M366S6453CTS ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... M366S6453CTS DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active Precharge standby cur- CC2 rent in power-down mode I PS CC2 I N CC2 Precharge standby cur- rent in non power-down mode I NS CC2 I P Active standby current in ...
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... M366S6453CTS AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...
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... M366S6453CTS AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter Symbol CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width ...
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... M366S6453CTS SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Auto precharge disable Read & column address Auto precharge enable Auto precharge disable Write & column address Auto precharge enable ...
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... M366S6453CTS PACKAGE DIMENSIONS 0.118 (3.000) A .118DIA 0.004 (3.000DIA 0.100) 0.350 (8.890) .450 (11.430) 0.250 (6.350) 0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100) Detail A Tolerances : .005(.13) unless otherwise specified The used device is 32Mx8 SDRAM, TSOP SDRAM Part No. :K4S560832C PC133/PC100 Unbuffered DIMM 5 ...
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... M366S6453CTS M366S6453CTS-L7C/L7A/L1H/L1L, C7C/C7A/C1H/C1L • Organization : 64MX64 • Composition : 32MX8 *16 • Used component part # : K4S560832C-TL7C/7A/1H/1L,TC7C/7A/1H/1L • rows in module : 2row • banks in component : 4 banks • Feature : 1,375 mil height & double sided component • Refresh : 8K/64ms • Contents : Byte#. Function described bytes written into serial memory at module manufacturer ...
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... M366S6453CTS SERIAL PRESENCE DETECT INFORMATION Byte # Function described 35 Data signal input hold time 36~61 Superset information (maybe used in future) 62 SPD data revision code 63 Checksum for bytes Manufacturer JEDEC ID code 65~71 ...... Manufacturer JEDEC ID code 72 Manufacturing location 73 Manufacturer part # (Memory module) 74 Manufacturer part # (DIMM configuration) ...