m366s6453cts Samsung Semiconductor, Inc., m366s6453cts Datasheet - Page 5

• Manufacturer Part Number: m366s6453cts
• Description: Pc133/pc100 Unbuffered Dimm
• Manufacturer: Samsung Semiconductor, Inc.

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS
M366S6453CTS
Operating current
(One bank active)
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
V
V
= 0 to 70 C)
IH
V
IH
V
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
PC133/PC100 Unbuffered DIMM
= 10ns
= 10ns
/V
=
=
SSQ
).
C
L
2,000 1,840 1,760 1,760
1040
1120
-7C
1120
-7A
960
Version
REV. 0.0 Sept. 2001
320
160
480
400
32
32
96
96
48
24
1040
960
-1H
1040
960
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2