k4m56323lg Samsung Semiconductor, Inc., k4m56323lg Datasheet - Page 8
![no-image](/images/no-image-200.jpg)
k4m56323lg
Manufacturer Part Number
k4m56323lg
Description
2m X 32bit X 4 Banks Mobile Sdram In 90fbga
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4M56323LG.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4m56323lg-HN75
Manufacturer:
SAMSUNG
Quantity:
10 610
Company:
Part Number:
k4m56323lg-HN75
Manufacturer:
AGERE
Quantity:
110
Company:
Part Number:
k4m56323lg-HN75
Manufacturer:
SAMSUNG
Quantity:
4 000
Part Number:
k4m56323lg-HN75
Manufacturer:
SEC
Quantity:
20 000
K4M56323LG - F(H)N/G/L/F
AC CHARACTERISTICS
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
SAC
SAC
SAC
t
t
SHZ
SLZ
CC
CC
CC
OH
OH
OH
CH
CL
SS
SH
Min
6.0
2.5
2.5
2.5
2.0
1.0
1
-
-
-
-
- 60
1000
Max
5.4
5.4
-
-
-
-
Min
7.5
9.0
2.5
2.5
2.5
2.5
2.0
1.0
1
-
-
- 75
1000
Max
5.4
5.4
7
7
-
-
Min
7.5
2.5
2.5
2.5
2.5
2.5
2.0
1.0
12
25
Mobile-SDRAM
1
-7L
1000
Max
5.4
5.4
20
20
8
8
February 2006
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2