k4m56323le Samsung Semiconductor, Inc., k4m56323le Datasheet - Page 11

k4m56323le

Manufacturer Part Number

k4m56323le

Description

2m X 32bit X 4 Banks Mobile Sdram In 90fbga

Manufacturer

Samsung Semiconductor, Inc.

Datasheet

1.K4M56323LE.pdf (12 pages)

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K4M56323LE - M(E)E/N/S/C/L/R

Partial Array Self Refresh

1. In order to save power consumption, Mobile SDRAM has PASR option.

2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : 4 Banks(256Mb), 2 Banks(128Mb) and 1 Bank(64Mb).

Temperature Compensated Self Refresh

1. In order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self

2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.

B. POWER UP SEQUENCE

1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.

2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.

3. Issue precharge commands for all banks of the devices.

4. Issue 2 or more auto-refresh commands.

5. Issue a mode register set command to initialize the mode register.

6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.

EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.

The default state without EMRS command issued is the full driver strength and all 4 banks refreshed.

The device is now ready for the operation selected by EMRS.

For operating with DS or PASR, set DS or PASR mode in EMRS setting stage.

In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not

needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.

- Apply VDD before or at the same time as VDDQ.

Commercial).

Temperature Range

refresh cycle automatically according to the two temperature range : Max 40 qC and Max 85 qC(for Extended), Max 70 qC(for

Max 85/70 qC

Max 40 qC

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=0

BA0=0

BA1=1

BA0=0

- 4 Banks

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=0

BA0=1

BA1=1

BA0=1

- E/C

1500

- N/L

1000

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

4 Banks

1000

Self Refresh Current (Icc6)

BA1=0

BA0=0

BA1=1

BA0=0

600

- 2 Banks

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=1

BA0=1

BA1=0

BA0=1

2 Banks

- S/R

800

500

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=0

BA0=0

BA1=1

BA0=0

- 1 Bank

1 Bank

Mobile-SDRAM

700

450

Partial Self Refresh Area

BA1=0

BA0=1

BA1=1

BA0=1

February 2004

Unit

k4m56323le Samsung Semiconductor, Inc., k4m56323le Datasheet - Page 11

k4m56323le

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