k4m56323le Samsung Semiconductor, Inc., k4m56323le Datasheet - Page 5

• Manufacturer Part Number: k4m56323le
• Description: 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4M56323LE - M(E)E/N/S/C/L/R
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. K4M56323LE-M(E)E/C**
5. K4M56323LE-M(E)N/L**
6. K4M56323LE-M(E)S/R**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
In commercial Temp : Max 40qC/Max 70qC, In extended Temp : Max 40qC/Max 85qC
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK dV
NS
PS CKE & CLK dV
NS
4
5
6
N
N
P
P
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
t
CKE d0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
CCD
O
= 0 mA
= 0 mA
tt
tt
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
-S/R
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
= f
= f
A
= -25 to 85qC for Extended, -25 to 70qC for Commercial)
Internal TCSR
CC
CC
-E/C
-N/L
CC
CC
= 10ns
= 10ns
4Banks
2Banks
1Bank
= f
= f
140
180
300
-80
Max 40
600
500
450
Version
1500
1000
Mobile-SDRAM
-1H
140
150
290
1.2
1.2
20
10
45
40
8
8
Max 85/70
1000
800
700
130
150
270
-1L
February 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
qC
uA
Note
1
1
2
4
5
3
6