k4h280838f Samsung Semiconductor, Inc., k4h280838f Datasheet - Page 14
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k4h280838f
Manufacturer Part Number
k4h280838f
Description
128mb F-die Ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H280838F.pdf
(23 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4h280838f-TLA2
Manufacturer:
SAMSUNG
Quantity:
19
DDR SDRAM 128Mb F-die (x4, x8)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.5V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.1 May. 2004
DDR333
TBD
TBD
TBD
TBD
Specification
DDR SDRAM
DDR266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V