hcts164ms Intersil Corporation, hcts164ms Datasheet

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hcts164ms

Manufacturer Part Number
hcts164ms
Description
Rad-hard 8-bit Serial-in/parallel-out Shift Register
Manufacturer
Intersil Corporation
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• Dose Rate Survivability >10
• Dose Rate Upset >10
• Single Event Ray Upset Rate < 2 x 10
• LET Threshold >100 MEV-cm
• Latch-Up-Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii ≤5µA at VOL, VOH
Description
The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/
Parallel-Out Shift Register with asynchronous reset.
The HCTS164MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
Truth Table
H = High Voltage Level
L = Low Voltage Level
q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock transition
HCTS164DMSR
HCTS164KMSR
HCTS164D/Sample
HCTS164K/Sample
HCTS164HMSR
= DS1 and DS2 inputs must be at state one setup prior to CP (rising edge)
(Typ)
-VIL = 0.8 VCC (Max)
-VIH = VCC/2 (Min)
Reset (Clear)
OPERATING
PART NUMBER
= LOW-to-HIGH clock transition
MODE
Shift
|
Intersil (and design) is a trademark of Intersil Americas Inc.
TM
10
MR
H
H
H
H
L
RAD (Si)/s (20ns Pulse)
TEMPERATURE RANGE
12
-55
-55
2
/mg
RAD (Si)/s (20ns Pulse)
o
o
o
C to +125
C to +125
C to +125
+25
+25
+25
o
o
o
C
C
C
CP
-9
X
Errors/Bit Day
o
o
C
C
o
C
INPUTS
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
8-Bit Serial-In/Parallel-Out Shift Register
DS1
1
X
H
H
L
L
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP)
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
HCTS164MS
SCREENING LEVEL
GND
DS1
DS2
Q0
Q1
Q2
Q3
DS2
H
H
X
L
L
GND
DS1
DS2
Q0
Q1
Q2
Q3
MIL-STD-1835, CDFP3-F14
MIL-STD-1835, CDIP2-T14
1
2
3
4
5
6
7
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
Radiation Hardened
Q0
H
L
L
L
L
14
13
12
11
10
9
8
14
13
12
10
11
9
8
Spec Number
OUTPUTS
PACKAGE
VCC
Q7
Q6
Q5
Q4
MR
CP
FN
Q1-Q7
q0 - q6
q0 - q6
q0 - q6
q0 -q6
L-L
VCC
Q7
Q6
Q5
Q4
MR
CP
518613
3386.1

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hcts164ms Summary of contents

Page 1

... VCC (Max) -VIH = VCC/2 (Min) • Input Current Levels Ii ≤5µA at VOL, VOH Description The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/ Parallel-Out Shift Register with asynchronous reset. The HCTS164MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family ...

Page 2

... Functional Diagram CP DS1 DS2 MR HCTS164MS 518613 Spec Number ...

Page 3

... VIL = 0.8V (Note 2) NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”. Specifications HCTS164MS Reliability Information Thermal Resistance SBDIP Package ...

Page 4

... Quiescent Current ICC Output Current (Sink) IOL Output Current (Source) IOH Output Voltage Low VOL Output Voltage High VOH Input Leakage Current IIN Noise Immunity FN Functional Test Specifications HCTS164MS GROUP (NOTES SUB- CONDITIONS GROUPS TEMPERATURE 9 10, 11 +125 9 10, 11 +125 9 10, 11 ...

Page 5

... Subgroup B-6 Group D NOTE: 1. Alternate Group A Testing in accordance with Method 5005 of MIL-STD-883 may be exercised. CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN Test which will be performed 100% Go/No-Go. Specifications HCTS164MS (NOTES 1, 2) CONDITIONS VCC = 4.5V VCC = 4.5V VCC = 4.5V GROUP B SUBGROUP DELTA LIMIT 5 5 -15 Hour TABLE 6 ...

Page 6

... VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.0 VS 1.3 VIL 0 GND 0 Specifications HCTS164MS 1/2 VCC = 3V ±0.5V VCC = 6V ±0. TABLE 9. IRRADIATION TEST CONNECTIONS GROUND 7 DUT TPHL CL = 50pF RL = 500Ω TTHL 80% 20% UNITS ...

Page 7

... Thickness: 13k Metallization Mask Layout DS2 (2) Q0 (3) Q1 (4) NC (5) Q2 HCTS164MS WORST CASE CURRENT DENSITY: 5 < 2 A/cm BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils HCTS164MS DS1 VCC Q7 (1) (14) (13) (6) (7) (8) Q3 GND (12) (11 ...

Page 8

... Palm Bay, FL 32905 Irvine, CA 92618 TEL: (321) 724-7000 TEL: (949) 341-7000 FAX: (321) 724-7946 FAX: (949) 341-7123 HCTS164MS 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Method 1015, Condition Hours Minimum, + 125 100% Interim Electrical Test 2 (T2) ...

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