hx6256 Honeywell International's Solid State Electronics Center (SSEC), hx6256 Datasheet
hx6256
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hx6256 Summary of contents
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... HX6256 32K x 8 Static RAM The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± ...
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... HX6256 FUNCTIONAL DIAGRAM SIGNAL DEFINITIONS A: 0-14 Address input pins which select a particular eight-bit word within the memory array. DQ: 0-7 Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation. NCS Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all input buffers except CE ...
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... HX6256 RADIATION CHARACTERISTICS Total Ionizing Radiation Dose The SRAM will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifications after rebound at VDD = 5.5 V and T =125° ...
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... HX6256 ABSOLUTE MAXIMUM RATINGS (1) Symbol VDD Supply Voltage Range (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature (5 Seconds) PD Maximum Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input Protection Voltage (4) ,JC Thermal Resistance (Jct-toCase) TJ Junction Temperature (1) Stresses in excess of those listed above may result in permanent damage ...
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... HX6256 DC ELECTRICAL CHARACTERISTICS Symbol Parameter IDDSB1 Static Supply Current Standby Supply Current – IDDSBMF Deselected Dynamic Supply Current – IDDOPW Selected (Write) Dynamic Supply Current – IDDOPR Selected (Read) II Input Leakage Current IOZ Output Leakage Current Low-Level Input Voltage VIL High-Level Input Voltage ...
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... HX6256 READ CYCLE AC TIMING CHARACTERISTICS (1) Symbol TAVAVR Address Read Cycle Time TAVQV Address Access Time TAXQX Address Change to Output Invalid Time TSLQV Chip Select Access Time TSLQX Chip Select Output Enable Time TSHQZ Chip Select Output Disable Time TEHQV Chip Select Access Time (4) ...
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... HX6256 WRITE CYCLE AC TIMING CHARACTERISTICS (1) Symbol TAVAVW Write Cycle Time TWLWH Write Enable Write Pulse Width TSLWH Chip Select to End of Write Time TDVWH Data Valid to End of Write Time TAVWH Address Valid to End of Write Time TWHDX Data Hold Time after End of Write Time ...
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... HX6256 8 www.honeywell.com/radhard ...
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... HX6256 DYNAMIC ELECTRICAL CHARACTERISTICS Read Cycle The RAM is asynchronous in operation, allowing the read cycle to be controlled by address, chip select (NCS), or chip enable (CE) (refer to Read Cycle timing diagram). To perform a valid read operation, both chip select and output enable (NOE) must be low and chip enable and write enable (NWE) must be high ...
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... HX6256 TESTER AC TIMING CHARACTERISTICS * Input rise and fall times <1 ns/V QUALITY AND RADIATION HARDNESS ASSURANCE Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a complete “Total Quality Assurance System,” a computer data base process performance tracking system, and a radiation- hardness assurance strategy. ...
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... HX6256 PACKAGING The 32K x 8 SRAM is offered in two custom 36-lead flat packs, a 28-Lead FP, or standard 28-lead DIP. Each package is constructed of multilayer ceramic (Al features internal power and ground planes. The 36-lead flat packs also feature a non-conductive ceramic tie bar on the lead frame. The tie bar allows electrical testing of ...
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... HX6256 36-LEAD FLAT PACK—BOTTOM BRAZE 36-LEAD FLAT PACK—TOP BRAZE 12 (22018131-001) [1] Parts delivered with leads unformed [2] At tie bar [3] Lid tied to VSS (22019627-001) [1] Parts delivered with leads unformed [2] At tie bar [3] Lid tied to VSS All dimensions in inches A 0.095 ± 0.014 M 0.008 ± ...
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... HX6256 DYNAMIC BURN-IN DIAGRAM* VDD = 5.6V, R ^10 K:, VIH = VDD, VIL = VSS Ambient Temperature _125°C, F0 _100 KHz Sq Wave Frequency F0/ F0/ F0/8, etc. *36-lead Flat Pack burn-in diagram has similar connections and is available on request. ORDERING INFORMATION (1) (1) Orders may be faxed to 763-954-2257. (2) For CMOS I/O type only. ...