sqm120n04-04 Vishay, sqm120n04-04 Datasheet - Page 4

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sqm120n04-04

Manufacturer Part Number
sqm120n04-04
Description
Automotive N-channel 40 V D-s 175 °c Mosfet
Manufacturer
Vishay
Datasheet
TYPICAL CHARACTERISTICS (T
S11-2036-Rev. B, 17-Oct-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.05
0.04
0.03
0.02
0.01
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
- 25
D
www.vishay.com
= 30 A
2
V
0
T
GS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
T
J
= 25 °C
V
75
GS
6
= 10 V
100
A
T
Drain Source Breakdown vs. Junction Temperature
J
55
53
51
49
47
45
= 25 °C, unless otherwise noted)
= 150 °C
- 50
125
8
I
150
- 25
D
= 10 mA
175
10
0
T
J
- Junction Temperature (°C)
25
50
4
75
100
0.001
- 0.2
- 0.6
- 1.0
- 1.4
- 1.8
0.01
100
0.6
0.2
0.1
10
125
1
- 50
0
www.vishay.com/doc?91000
150
- 25
Source Drain Diode Forward Voltage
0.2
175
T
J
V
0
= 150 °C
SD
- Source-to-Drain Voltage (V)
0.4
25
T
Threshold Voltage
J
- Temperature (°C)
50
SQM120N04-04
0.6
75
Vishay Siliconix
I
T
D
Document Number: 67045
J
0.8
100
= 250 μA
= 25 °C
125
I
D
1.0
= 5 mA
150
175
1.2

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