nvtfs5820nl ON Semiconductor, nvtfs5820nl Datasheet - Page 3

• Manufacturer Part Number: nvtfs5820nl
• Description: Nvtfs5820nl Power Mosfet
• Manufacturer: ON Semiconductor

0.030
0.025
0.020
0.015
0.010
0.005
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
80
70
60
50
40
30
20
10
0
−50
2
0
Figure 3. On−Resistance vs. Gate−to−Source
V
I
D
GS
10 V
−25
Figure 5. On−Resistance Variation with
= 10 A
Figure 1. On−Region Characteristics
V
= 10 V
V
DS
GS
T
1
4
J
, DRAIN−TO−SOURCE VOLTAGE (V)
0
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
25
V
GS
Temperature
2
6
= 5 V
Voltage
50
75
3
8
100
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
TYPICAL CHARACTERISTICS
125
T
I
10
T
4
D
J
J
= 25°C
= 10 A
= 25°C
http://onsemi.com
150
175
5
12
3
100,000
10,000
0.016
0.014
0.012
0.010
0.008
1,000
100
80
70
60
50
40
30
20
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
T
J
= 0 V
≥ 10 V
= 25°C
10
V
V
Figure 2. Transfer Characteristics
DS
GS
T
T
20
J
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
= 125°C
2
15
I
D
, DRAIN CURRENT (A)
Gate Voltage
vs. Voltage
30
V
20
GS
T
= 4.5 V
3
J
V
= 150°C
GS
T
J
25
= −55°C
= 10 V
40
T
J
= 125°C
30
4
50
35
40
60
5