nvtfs5820nl ON Semiconductor, nvtfs5820nl Datasheet - Page 4

• Manufacturer Part Number: nvtfs5820nl
• Description: Nvtfs5820nl Power Mosfet
• Manufacturer: ON Semiconductor

1800
1600
1400
1200
1000
1000
1000
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
C
V
I
V
R
Thermal Limit
Package Limit
V
Single Pulse
T
D
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
C
GS
DS(on)
= 10 A
C
= 25°C
= 48 V
= 4.5 V
t
= 10 V
oss
r
10
Figure 7. Capacitance Variation
Limit
DRAIN−TO−SOURCE VOLTAGE (V)
R
t
V
f
G
DS
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
20
, DRAISN VOLTAGE (V)
1
C
30
10
iss
1 ms
100 ms
10
40
t
d(on)
TYPICAL CHARACTERISTICS
10 ms
V
T
t
10 ms
J
GS
d(off)
50
= 25°C
dc
http://onsemi.com
= 0 V
100
60
100
4
10
40
30
20
10
60
50
40
30
20
10
8
6
4
2
0
0
0
0.5
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 8. Gate−to−Source Voltage vs. Total
J
GS
Figure 12. Maximum Avalanche Energy vs.
gs
T
= 25°C
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
V
50
SD
5
Starting Junction Temperature
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
g
gd
, TOTAL GATE CHARGE (nC)
75
10
0.7
Charge
Q
T
100
15
0.8
125
20
V
T
I
DS
D
0.9
I
J
D
150
= 10 A
= 25°C
25
= 37 A
= 48 V
175
1.0
30