buk9620-100a NXP Semiconductors, buk9620-100a Datasheet - Page 2

• Manufacturer Part Number: buk9620-100a
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07915
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
GSM
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 01 — 7 February 2001
BUK9520-100A; BUK9620-100A
Conditions
T
T
T
T
Conditions
t
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
p
mb
mb
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
50 s
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
100 V; V
and
mb
= 25 C
GS
GS
3
Figure 1
GS
GS
GS
= 5 V; I
= 4.5 V; I
GS
= 5 V
= 5 V;
= 5 V; R
= 5 V;
p
p
D
= 25 A
D
10 s;
10 s
Figure 2
GS
= 25 A
D
= 63 A;
= 50 ;
TrenchMOS™ logic level FET
Typ
17
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
100
63
200
175
20
22
Max
100
100
63
45
253
200
+175
+175
63
253
420
10
15
Unit
V
A
W
m
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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