dmg6602svt Diodes, Inc., dmg6602svt Datasheet - Page 4

• Manufacturer Part Number: dmg6602svt
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMG6602SVT
Document number: DS35159 Rev. 1 - 2
10.0
0.01
1.6
1.4
1.2
0.8
0.6
8.0
6.0
4.0
2.0
0.0
0.1
1
1
0
-50
0
Fig. 5 On-Resistance Variation with Temperature
0.5
-25
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
T , JUNCTION TEMPERATURE ( C)
DS
J
4
Fig. 3 Typical On-Resistance vs.
1
I , DRAIN SOURCE CURRENT
Drain Current and Gate Voltage
D
R
DS(ON)
0
1.5
( ) Ave @ V =4.5V
Ω
25
2
8
2.5
50
G
R
DS(ON)
12
3
75
( ) Ave @ V =10V
3.5
Ω
100
16
4
°
125
G
4.5
Q1 N-CHANNEL
150
5
20
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0.08
0.06
0.04
0.02
0.16
0.12
0.08
0.04
0.1
10
0
8
6
4
2
0
-50
0
0
0
V
Fig. 6 On-Resistance Variation with Temperature
DS
V
GS
= 5.0V
-25
= 4.5V
Fig. 2 Typical Transfer Characteristics
V
T , JUNCTION TEMPERATURE ( C)
I , DRAIN SOURCE CURRENT (A)
1
GS
Ave
D
J
2
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
, GATE SOURCE VOLTAGE(V)
R
0
DS(ON)
25
( ) @ 125°C
2
Ω
4
50
Ave
3
Ave
Ave
Ave
6
75
R
DMG6602SVT
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
100
( ) @ 25°C
4
( ) @ 150°C
Ω
( ) @ 85°C
( ) @ -55°C
Ω
Ω
Ω
8
© Diodes Incorporated
°
125
August 2011
5
150
10