dmg6602svt Diodes, Inc., dmg6602svt Datasheet - Page 7

• Manufacturer Part Number: dmg6602svt
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMG6602SVT
Document number: DS35159 Rev. 1 - 2
1000
1.6
1.2
0.8
0.4
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
100
10
2
0
-50
10
8
6
4
2
0
0
0
V
DS
-25
=-15, I =-3A
T , JUNCTION TEMPERATURE ( C)
Fig. 22 Gate Charge Characteristics
J
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Junction Capacitance
5
2
DS
D
0
10
25
4
Q - (nC)
G
50
15
C
ISS
6
75
C
Ave(pF)
RSS
20
Ave(pF)
100
C
OSS
8
°
f = 1MHz
125
25
Ave(pF)
Q2 P-CHANNEL
150
10
30
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10,000
1,000
100
0.1
10
8
6
4
2
0
Fig. 21 Typical Drain-Source Leakage Current vs. Voltage
1
0
0
Fig. 19 Diode Forward Voltage vs. Current
0.2
V , SOURCE -DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
SD
5
DS
0.4
10
0.6
15
0.8
I
DSS
I
DSS
20
DMG6602SVT
I
DSS
(nA) Ave @ 150 C
1
(nA) Ave @
(nA) Ave @
25
1.2
© Diodes Incorporated
85 C
25 C
°
August 2011
°
°
1.4
30