k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 52

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
Figure 22 - Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock).
V
V
V
V
V
V
Hold Slew Rate
IL
IL
DDQ
REF
IH
IH
Rising Signal
(DC) max
(AC) max
(AC) min
(DC) min
DQS
DQS
(DC)
CK
CK
V
SS
dc to V
dc to V
region
region
=
V
REF
REF
REF
Delta TR
(DC) - V
slew rate
tDS
nominal
tIS
IL
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(DC)max
tDH
tIH
Delta TR
Hold Slew Rate
Falling Signal
nominal
slew rate
dc to V
region
tDS
tIS
=
V
DDP 2Gb DDR3 SDRAM
IH
REF
(DC)min - V
tDH
tIH
Delta TF
Delta TF
REF
(DC)
Rev. 1.0 March 2009