k4b2g0446e Samsung Semiconductor, Inc., k4b2g0446e Datasheet - Page 54

• Manufacturer Part Number: k4b2g0446e
• Description: Ddp 2gb E-die Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G0446E
K4B2G0846E
Figure 24 - Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock)
Hold Slew Rate tangent line [ V
V
V
V
V
V
V
Rising Signal
IL
IL
REF
DDQ
IH
IH
(DC) max
(AC) max
(AC) min
(DC) min
(DC)
DQS
DQS
CK
CK
V
SS
=
dc to V
dc to V
region
region
REF
REF
Delta TR
tDS
tIS
tangent
REF
line
Page 54 of 59
(DC) - V
Hold Slew Rate
Falling Signal
tDH
tIH
Delta TR
IL
(DC)max ]
=
nominal
tangent line [ V
line
tDS
tIS
tangent
Delta TF
line
DDP 2Gb DDR3 SDRAM
IH
tDH
tIH
(DC)min - V
Delta TF
nominal
line
REF
(DC) ]
Rev. 1.0 March 2009