nvd5803n ON Semiconductor, nvd5803n Datasheet

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nvd5803n

Manufacturer Part Number
nvd5803n
Description
Nvd5803n Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
nvd5803nT4G
Manufacturer:
ON
Quantity:
12 500
NVD5803N
Power MOSFET
40 V, 85 A, Single N−Channel, DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L(pk)
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 1)
Compliant
Low R
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
DC Motor Drive
Reverse Battery Protection
Glow Plug
(Cu area = 1.127 in sq [1 oz] including traces.
qJC
= 40 A, L = 0.3 mH)
) (Note 1)
DS(on)
DD
qJC
= 50 V, V
)
Parameter
Parameter
GS
(T
Steady
State
= 10 V, R
J
= 25°C unless otherwise noted)
t
p
= 10 ms
T
T
T
G
C
C
C
= 25 W,
= 100°C
= 25°C
= 25°C
Symbol
Symbol
T
V
R
R
J
V
E
I
P
, T
T
DSS
DM
qJC
I
I
qJA
GS
D
AS
S
D
L
stg
Value
−55 to
Value
"20
1.8
228
175
240
260
42
40
85
61
83
85
1
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
V
(BR)DSS
40 V
ORDERING INFORMATION
G
Y
WW
5803N = Device Code
G
MARKING DIAGRAM
& PIN ASSIGNMENT
N−CHANNEL MOSFET
http://onsemi.com
(Surface Mount)
CASE 369AA
5.7 mW @ 10 V
1 2
Gate
R
STYLE 2
= Year
= Work Week
= Pb−Free Package
DS(on)
1
DPAK
Drain
Drain 3
D
3
4
2
Publication Order Number:
Source
MAX
S
4
NVD5803N/D
I
D
85 A
MAX

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nvd5803n Summary of contents

Page 1

... MAX DS(on 5 N−CHANNEL MOSFET DPAK CASE 369AA (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 2 Drain 3 1 Gate Source Y = Year WW = Work Week 5803N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NVD5803N/D ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NVD5803NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25° ...

Page 3

T = 25° 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.010 0.008 0.006 0.004 2 4 ...

Page 4

C 3500 iss 3000 2500 2000 1500 1000 C oss 500 C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 5

Duty Cycle = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 0 ...

Page 6

... U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVD5803N/D ...

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