nvd5803n ON Semiconductor, nvd5803n Datasheet - Page 4

• Manufacturer Part Number: nvd5803n
• Description: Nvd5803n Power Mosfet
• Manufacturer: ON Semiconductor

4000
3500
3000
2500
2000
1500
1000
1000
1000
500
100
100
0.1
10
10
0
1
1
0.1
0
1
C
R
Thermal Limit
Package Limit
V
I
V
Figure 9. Resistive Switching Time Variation
V
Single Pulse
T
rss
D
Figure 11. Maximum Rated Forward Biased
DS(on)
DD
GS
C
GS
= 85 A
= 25°C
= 32 V
= 10 V
= 10 V
t
C
d(off)
Limit
Figure 7. Capacitance Variation
t
DRAIN−TO−SOURCE VOLTAGE (V)
oss
t
f
r
C
10
R
V
iss
G
DS
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
, DRAISN VOLTAGE (V)
1
20
10
10
TYPICAL CHARACTERISTICS
30
V
T
t
d(on)
GS
J
= 25°C
http://onsemi.com
100 ms
10 ms
= 0 V
10 ms
1 ms
dc
100
100
40
4
15
12
9
6
3
0
0
250
200
150
100
80
70
60
50
40
30
20
10
50
0
0
0.4
25
5
Q
Figure 10. Diode Forward Voltage vs. Current
gs
V
T
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
GS
J
T
10
V
= 25°C
J
DS
, STARTING JUNCTION TEMPERATURE (°C)
0.5
= 0 V
V
50
SD
15
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
g
gd
20
0.6
, TOTAL GATE CHARGE (nC)
75
QT
25
0.7
30
100
35
0.8
V
GS
40
125
T
0.9
I
D
45
J
= 50 A
= 25°C
I
D
150
50
1.0
= 85 A
55
30
24
18
12
6
0
175
1.1