tpcm8004-h TOSHIBA Semiconductor CORPORATION, tpcm8004-h Datasheet - Page 6

• Manufacturer Part Number: tpcm8004-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
2.5
1.5
0.5
0.1
10
0
3
2
1
1
0.1
0
* Single−pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
(2)
(1)
Drain-source voltage V
Ambient temperature Ta (
40
1000
0.01
100
0.1
0.0001
10
Safe operating area
1
1
10 ms *
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
(3) Tc=25°C
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t = 10 s
board(a) (Note 2a)
board(b) (Note 2b)
P
D
80
– Ta
t =1 ms *
0.001
V DSS max
10
DS
120
(V)
0.01
°
C)
160
100
Pulse width t
0.1
r
th
– t
6
w
w
1
(s)
40
30
20
10
0
0
10
Case temperature T
40
Single Pulse
100
Single - pulse
P
D
(2)
(2)
(1)
(1)
(3)
(3)
80
– Tc
1000
C
120
TPCM8004-H
(
°
C)
2009-02-23
160